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APTM100H45ST
Full bridge Series & parallel diodes MOSFET Power Module
VBUS CR1A CR3A
VDSS = 1000V RDSon = 450m max @ Tj = 25C ID = 18A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies
Q1
CR1B
CR3B
Q3
G1 S1 CR2A O UT1 OUT2 CR4A
G3 S3
Q2
CR2B
CR4B
Q4
G2 S2 NTC1 0/VBUS NTC2
G4 S4
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile
G3 S3
G4 S4
OUT2
VBUS
0/VBUS
OUT1
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM100H45ST - Rev 2
Max ratings 1000 18 14 72 30 450 357 18 50 2500
Unit V A V m W A mJ
June, 2004
APTM100H45ST
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 250A Min 1000
VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V
Tj = 25C Tj = 125C
Typ
Max 100 500 450 5 100
Unit V A m V nA
VGS = 10V, ID = 9A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 18A Inductive switching @ 125C VGS = 15V VBus = 667V ID = 18A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 667V ID = 18A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 667V ID = 18A, R G = 5
Min
Typ 4350 715 120 154 26 97 10 12 121 35 639 380 1046 451
Max
Unit pF
nC
ns
J
J
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage
Test Conditions 50% duty cycle IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/s IF = 30A VR = 133V di/dt = 200A/s
Min Tc = 85C
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Typ 30 1.1 1.4 0.9 24 48 33 150
Max 1.15
Unit A V
June, 2004 2-6 APTM100H45ST - Rev 2
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
APT website - http://www.advancedpower.com
APTM100H45ST
Parallel diode ratings and characteristics
Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 30A IF = 60A IF = 30A IF = 30A VR = 667V di/dt = 200A/s IF = 30A VR = 667V di/dt = 200A/s Min Tc = 65C Typ 30 1.9 2.2 1.7 290 390 670 2350 Max 2.3 V Unit A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
Thermal and package characteristics
Symbol Characteristic RthJC Junction to Case VISOL TJ TSTG TC Torque Wt Transistor Diode
Min
Typ
Max 0.35 1.2 150 125 100 4.7 160
Unit C/W V C N.m g Unit k K
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
2500 -40 -40 -40
To Heatsink
M5
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
Min
Typ 68 4080
Max
RT =
R 25 1 1 exp B25 / 85 T - T 25
T: Thermistor temperature RT : Thermistor value at T
Package outline
APT website - http://www.advancedpower.com
3-6
APTM100H45ST - Rev 2
June, 2004
APTM100H45ST
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.7 0.5 0.3 0.9
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 60 I D, Drain Current (A) ID, Drain Current (A) 50 40 30 20 10 0 0 5 10 15 20 25 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 9A 5.5V 5V VGS =15&8V 7V 6.5V 6V
Transfert Characteristics 80 70 60 50 40 30 20 10 0 30 0 1 2 3 4 5 6 TJ =25C TJ=125C TJ=-55C 7 8 9 10
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 20 18 16 14 12 10 8 6 4 2 0 25 50 75 100 125 150
June, 2004 4-6 APTM100H45ST - Rev 2
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V VGS=20V
10
20
30
40
50
ID, Drain Current (A)
TC, Case Temperature (C)
APT website - http://www.advancedpower.com
APTM100H45ST
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 40 80 120 160 200 Gate Charge (nC)
June, 2004
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=9A
100
limited by RDSon 100s
10
1ms
Single pulse TJ=150C 1 1
10ms
10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage ID=18A TJ=25C
VDS=200V V DS =500V VDS=800V
10000
Ciss Coss Crss
1000
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
5-6
APTM100H45ST - Rev 2
APTM100H45ST
Delay Times vs Current 160 140 td(on) and td(off) (ns) 120 100 80 60 40 20 0 5 10 15 20 25 30 35 40 I D, Drain Current (A) Switching Energy vs Current td(on) 10 0 5 10 15 20 25 30 ID, Drain Current (A) 35 40
VDS=667V RG=5 TJ=125C L=100H
Rise and Fall times vs Current 60
V DS =667V RG =5 T J=125C L=100H
t d(off) tr and tf (ns)
50 40 30 20
tf
tr
Switching Energy vs Gate Resistance 2.5 Switching Energy (mJ)
V DS =667V ID=18A T J=125C L=100H
2
Switching Energy (mJ)
1.5 1
V DS =667V RG =5 T J=125C L=100H
Eon
Eoff
2 1.5 1 0.5 0
Eon
Eoff 0.5 0 5 10 15 20 25 30 35 40
I D, Drain Current (A) Operating Frequency vs Drain Current
VDS=667V D=50% RG=5 T J=125C
0
5
10
15
20
25
30
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A) 1000
250 200 Frequency (kHz) 150 100 50 0 6 8 10 12 14 16 ID, Drain Current (A) 18
100 TJ =150C 10 TJ =25C
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
June, 2004
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
6-6
APTM100H45ST - Rev 2
APT reserves the right to change, without notice, the specifications and information contained herein

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